SEMICONDUCTOR DEVICE HAVING 4F2 TRANSISTOR AND THE METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to increase a driving speed of a semiconductor device by forming 4F2 transistor of a laminate structure instead of a pillar structure. CONSTITUTION: An active region is defined on a semiconductor substrate(100). A trench is formed inside the active region with a vertical structure. A buried bit line(135) and an etch stop film(140) are extended into one direction of the semiconductor substrate. A gate electrode of a laminate structure is arranged into a vertical direction about the etch stop film. An insulation film pattern is formed to both side walls of the gate electrode. A word line(240) is extended into a cross direction of the buried bit line. A transistor comprises the buried bit line and the word line.