发明名称 ROLL-TO-ROLL PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION METHOD OF BARRIER LAYERS COMPRISING SILICON AND CARBON
摘要 <p>The present invention provides method and process for forming a barrier layer on a flexible substrate. The continuous roll-to-roll method includes providing a substrate to a processing chamber using at least one roller configured to guide the substrate through the processing chamber. The process includes depositing a barrier layer adjacent the substrate by exposing at least one portion of the substrate that is within the processing chamber to plasma comprising a silicon-and-carbon containing precursor gas. The present invention is further directed to a coated flexible substrates comprising a barrier layer based on the structural unit SiC:H. The barrier layer possesses high density and low porosity. Still further, the barrier layer exhibits low water vapor transmission rate (WVTR) in the range of 10−2-10−3 g.m−2d−1 and is appropriate for very low permeability applications.</p>
申请公布号 EP2137338(A2) 申请公布日期 2009.12.30
申请号 EP20080731075 申请日期 2008.02.29
申请人 DOW CORNING CORPORATION 发明人 ZAMBOV, LUDMIL, M.;SHAMAMIAN, VASGEN, A.;WEIDNER, WILLIAM, K.;LOBODA, MARK, J.;SNOW, STEVE, A.;CERNY, GLENN, A.
分类号 C23C16/54;C23C16/30;C23C16/32 主分类号 C23C16/54
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