METHOD AND APPARATUS FOR LASER ANNEALING

摘要

Disclosed are a method and an apparatus for laser annealing that can form a crystalline semiconductor thin film on the whole area of a substrate without sacrificing the uniformity of crystallinity in a seam part in a major axis direction of a laser beam, in a state in which the seam part is such good and highly uniform as is visually unrecognizable.   During the application of a linear beam, an area corresponding to the end of the linear beam is shielded with a mask (10) disposed on the optical path of the laser beam (2), and the mask (10) is operated so that the amount of shielding is periodically increased or decreased.