HIGHLY INTEGRATED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A high integrated semiconductor device and a manufacturing method thereof are provided to reduce the number of mask processes by forming a semiconductor layer of a single well structure. CONSTITUTION: A first substrate(110) includes a first cell region and a first peripheral region. A first memory cell array is arranged to the first cell region. The first peripheral region is electrically separated from the first cell region. A second substrate(115) is laminated on the first substrate, and includes a second cell region and a second peripheral region. A second memory cell array is arranged to the second cell region. The second peripheral region is physically and electrically separated from the second cell region. The second substrate includes a semiconductor layer pattern of a single conductive type.