| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor flash memory is provided to simplify a process for forming a floating gate of a flash memory by using a floating insulation film mask. CONSTITUTION: A field oxide film(202) is formed on a bottom layer(200) of a semiconductor. An interlayer insulation film is formed on the field oxide film, and is a USG(Undoped Silicate Glass) film formed by high density chemical vapor deposition. A photoresist pattern for forming a floating gate is formed on the interlayer insulation film. The interlayer insulation film is etched by using the photoresist pattern as a mask. A polysilicon for the floating gate is laminated on the interlayer insulation film. The polysilicon for the floating gate and the interlayer insulation film are flattened by blanket etching.</p> |
