发明名称 Rework process for photoresist film
摘要 There is disclosed a rework process for a photoresist film over a substrate having at least a first antireflection silicone resin film and the photoresist film over the first silicone resin film comprising: at least removing the photoresist film with a solvent while leaving the first silicone resin film unremoved; forming a second antireflection silicone resin film over the first silicone resin film; and forming a photoresist film again over the second silicone resin film. There can be provided a rework process for a photoresist film that can be conducted more easily at lower cost and provide more certainly an excellent resist pattern.
申请公布号 US7638268(B2) 申请公布日期 2009.12.29
申请号 US20060594937 申请日期 2006.11.09
申请人 SHIN-ESTU CHEMICAL CO., LTD. 发明人 OGIHARA TSUTOMU;UEDA TAKAFUMI
分类号 G03F7/00;G03F1/00;G03F7/004;G03F7/11;H01L21/027 主分类号 G03F7/00
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