| 发明名称 |
Method of forming a semiconductor device and structure therefor |
| 摘要 |
A method of forming a semiconductor device includes forming isolation trenches that are used to isolate some of the electrical elements such as transistors, diodes, capacitors, or resistors on a semiconductor die from other elements on the semiconductor die.
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| 申请公布号 |
US7638385(B2) |
申请公布日期 |
2009.12.29 |
| 申请号 |
US20050119106 |
申请日期 |
2005.05.02 |
| 申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
GRIVNA GORDON M.;ZDEBEL PETER J.;DOW DIANN |
| 分类号 |
H01L21/8238;H01L21/8249 |
主分类号 |
H01L21/8238 |
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