| 摘要 |
A method for fabricating a semiconductor device is provided which has first and second regions, transistors of different conductivity types being formed on parts of a substrate corresponding to the first and second regions. The method includeujs the steps of: (a) forming a first insulating film to cover the parts of the substrate corresponding to the first and second regions; (b) forming a first thin film on the first insulating film, the first thin film having a relatively higher etching rate than the first insulating film in plasma etching using a halogen gas; and (c) removing a part of the first thin film corresponding to the first region by the plasma etching using a mask covering the second region and modifying a part of the first insulating film corresponding to the first region.
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