发明名称 |
Methods for fabricating a semiconductor structure using a mandrel and semiconductor structures formed thereby |
摘要 |
Methods of fabricating a semiconductor structure in which a body of monocrystalline silicon is formed on a sidewall of a sacrificial mandrel and semiconductor structures made by the methods. After the body of monocrystalline silicon is formed, the sacrificial material of the mandrel is removed selective to the monocrystalline silicon of the body. The mandrel may be composed of porous silicon and the body may be fabricated using either a semiconductor-on-insulator substrate or a bulk substrate. The body may be used to fabricate a fin body of a fin-type field effect transistor.
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申请公布号 |
US7638381(B2) |
申请公布日期 |
2009.12.29 |
申请号 |
US20050246830 |
申请日期 |
2005.10.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;MANDELMAN JACK ALLAN |
分类号 |
H01L21/336;H01L21/00;H01L21/3205;H01L21/8234;H01L21/84 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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