发明名称 |
Interconnects with harmonized stress and methods for fabricating the same |
摘要 |
Interconnects with harmonized stress and methods for fabricating the same. An interconnect comprises a substrate having a conductive member. A composite low-k dielectric layer interposed with at least one stress-harmonizing layer therein overlies the substrate. A conductive feature in the composite low-k dielectric layer passes through the at least one stress-harmonizing layer to electrically connect the conductive member.
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申请公布号 |
US7638859(B2) |
申请公布日期 |
2009.12.29 |
申请号 |
US20050144742 |
申请日期 |
2005.06.06 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LU YUNG-CHENG;TSAI MING-HSING |
分类号 |
H01L23/58;H01L23/52 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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