发明名称 Interconnects with harmonized stress and methods for fabricating the same
摘要 Interconnects with harmonized stress and methods for fabricating the same. An interconnect comprises a substrate having a conductive member. A composite low-k dielectric layer interposed with at least one stress-harmonizing layer therein overlies the substrate. A conductive feature in the composite low-k dielectric layer passes through the at least one stress-harmonizing layer to electrically connect the conductive member.
申请公布号 US7638859(B2) 申请公布日期 2009.12.29
申请号 US20050144742 申请日期 2005.06.06
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LU YUNG-CHENG;TSAI MING-HSING
分类号 H01L23/58;H01L23/52 主分类号 H01L23/58
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