| 发明名称 |
POLISHING COMPOSITION AND METHOD FOR HIGH SILICON NITRIDE TO SILICON OXIDE REMOVAL RATE RATIOS |
| 摘要 |
<p>The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide. (No Figure)</p> |
| 申请公布号 |
SG157354(A1) |
申请公布日期 |
2009.12.29 |
| 申请号 |
SG20090071754 |
申请日期 |
2005.10.21 |
| 申请人 |
CABOT MICROELECTRONICS CORPORATION |
发明人 |
CARTER, PHILLIP;JOHNS, TIMOTHY |
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