发明名称 |
METHOD OF FORMING A NANOSTRUCTURE |
摘要 |
<p>A method of forming a discrete nanostructured element at one or more predetermined locations on a substrate is presented. The method includes forming a mask member over the substrate. A window is formed in the mask member at each of one or more locations at which it is required to form the nanostructured element thereby to expose a portion of a surface of the substrate. A portion of the substrate exposed by the window at the one or more locations is removed to form one or more recesses in the substrate. The method further includes forming a layer of a nanostructure medium over a surface of the recess and annealing the structure thereby to form the nanostructured element in each of the one or more recesses. The nanostructured element includes a portion of the nanostructure medium and has an external dimension along at least two substantially orthogonal directions of less than substantially 100nm.</p> |
申请公布号 |
SG157317(A1) |
申请公布日期 |
2009.12.29 |
申请号 |
SG20090033796 |
申请日期 |
2009.05.18 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD;NATIONAL UNIVERSITY OF SINGAPORE |
发明人 |
GUAN CHEW HAN;FEI ZHENG;KIONG CHOI WEE;HAW LIEW TZE |
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