发明名称 Semiconductor structure and method of forming the same
摘要 A method of forming a semiconductor structure comprises providing a semiconductor substrate comprising a layer of a dielectric material. A recess is provided in the layer of dielectric material. The recess is filled with a material comprising silver.
申请公布号 US7638428(B2) 申请公布日期 2009.12.29
申请号 US20070776155 申请日期 2007.07.11
申请人 GLOBALFOUNDRIES, INC. 发明人 STRECK CHRISTOF;KAHLERT VOLKER
分类号 H01L21/4763 主分类号 H01L21/4763
代理机构 代理人
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