发明名称 |
Semiconductor structure and method of forming the same |
摘要 |
A method of forming a semiconductor structure comprises providing a semiconductor substrate comprising a layer of a dielectric material. A recess is provided in the layer of dielectric material. The recess is filled with a material comprising silver.
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申请公布号 |
US7638428(B2) |
申请公布日期 |
2009.12.29 |
申请号 |
US20070776155 |
申请日期 |
2007.07.11 |
申请人 |
GLOBALFOUNDRIES, INC. |
发明人 |
STRECK CHRISTOF;KAHLERT VOLKER |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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