An example method embodiment forms spacers that create tensile stress on the substrate on both the PFET and NFET regions. We form PFET and NFET gates and form tensile spacers on the PFET and NFET gates. We implant first ions into the tensile PFET spacers to form neutralized stress PFET spacers. The neutralized stress PFET spacers relieve the tensile stress created by the tensile stress spacers on the substrate. This improves device performance.
申请公布号
SG157405(A1)
申请公布日期
2009.12.29
申请号
SG20090077058
申请日期
2006.03.15
申请人
CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
发明人
YONG LIM KHEE;WENHE LIN;WOH LAI CHUNG;MENG LEE YONG;CHOO HSIA LIANG;WAY TEH YOUNG;SUDIJONO JOHN;LENG TAN WEE;PENG KOH HUI