发明名称 Devices and systems including the bit lines and bit line contacts
摘要 A method for forming a semiconductor device comprises forming first and second bit lines at different levels. Forming the bit lines at different levels increases processing latitude, particularly the spacing between the bit lines which, with conventional processes, may strain photolithographic limits. A semiconductor device formed using the method, and an electronic system comprising the semiconductor device, are also described.
申请公布号 US7638878(B2) 申请公布日期 2009.12.29
申请号 US20060404209 申请日期 2006.04.13
申请人 MICRON TECHNOLOGY, INC. 发明人 ARITOME SEIICHI
分类号 H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/48
代理机构 代理人
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