| 摘要 |
Provided is a substrate preparation method for a micro-electromechanical system (MEMS) fabrication process. The method includes the step of depositing at least four metal layers interspersed with interlayer dielectric (ILD) layers onto a silicon wafer substrate. A passivation layer is deposited onto an outermost metal layer and at least a portion of the passivation layer is masked with a photoresist. A pit is etched through the photoresist in the substrate, said pit having a base and sidewalls. Etching is carried out along an edge of the substrate to expose the last metal layer to define bonding pads. A step of etching is carried out on either side of the pit to expose the outermost metal layer to define electrode portions. The bonding pads are for operatively connecting a microprocessor for controlling a heater element suspended in the pit between the electrode portions.
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