Semiconductor device with buried conductive layer

摘要

A semiconductor device includes a first insulator formed at a part under a semiconductor layer, a second insulator formed under the semiconductor layer in an arranged manner avoiding the first insulator and having a relative dielectric constant different from that of the first insulator, a backgate electrode formed under the first and second insulators, a gate electrode formed on the semiconductor layer, and a source layer and a drain layer formed in the semiconductor layer to be respectively arranged on opposite lateral sides of the gate electrode.