PHASE CHANGE MEMORY DEVICE

摘要

PURPOSE: A phase change memory device is provided to reduce a current and a program voltage by increasing temperature of a heat generated in a contact surface between a phase change pattern and a conductive pattern during a program operation. CONSTITUTION: A phase change memory device includes a phase change pattern(240) and a conductive pattern(230). The phase change pattern includes a program part(P). A maximum temperature of a heat generated in the program part is reduced during a program operation. The program part is arranged to a confining region. The conductive pattern is contacted with the phase change pattern. A temperature of the heat generated in a contact surface between the phase change pattern and the conductive pattern is increased during the program operation. An insulator surrounds the contact surface between the phase change pattern and the conductive pattern.