发明名称 |
Phase change memory device and method of forming the same |
摘要 |
Provided are a phase change memory device and a method of forming the same. According to the phase change memory, a first plug electrode and a second plug electrode are spaced apart from each other in a mold insulating layer. A phase change pattern is disposed on the mold insulating layer. The phase change pattern contacts a top of the first plug electrode and a first potion of a top of the second plug electrode. An interconnection is electrically connected to a second portion of the top of the second plug electrode.
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申请公布号 |
US7638788(B2) |
申请公布日期 |
2009.12.29 |
申请号 |
US20070974774 |
申请日期 |
2007.10.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN DONG-HO;HORII HIDEKI;SHIN JONG-CHAN;BAE JUN-SOO;AN HYEONG-GEUN |
分类号 |
H01L29/04 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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