发明名称 |
Photoresist composition and method of manufacturing a thin-film transistor substrate using the same |
摘要 |
In one example, a photoresist composition includes about 1 to about 70 parts by weight of a first binder resin including a repeat unit represented by the following Chemical Formula 1, about 1 to about 70 parts by weight of a second binder resin including a repeat unit represented by the following Chemical Formula 2, about 0.5 to about 10 parts by weight of a photo-acid generator, about 1 to about 20 parts by weight of a cross-linker and about 10 to about 200 parts by weight of a solvent. The photoresist composition may improve the heat resistance and adhesion ability of a photoresist pattern. wherein R1 and R2 independently represent an alkyl group having 1 to 5 carbon atoms, and n and m independently represent a natural number. |
申请公布号 |
US7638253(B2) |
申请公布日期 |
2009.12.29 |
申请号 |
US20080082436 |
申请日期 |
2008.04.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JEONG-MIN;JUNG DOO-HEE;LEE HI-KUK;YOUN HYOC-MIN;KOO KI-HYUK |
分类号 |
G03F7/004;G03F7/023;G03F7/30 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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