发明名称 MODE SELECTING CIRCUIT FOR USE IN SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: An operation mode selecting circuit in a semiconductor memory device is provided to cut out a current path generated after pad bonding, thereby preventing the current consumption through the current path. CONSTITUTION: An operation mode selecting circuit comprises a floating or bonded bonding pad(100), a buffer(80) connected to the bonding pad, a switching unit(50), and a current path cutout unit(P1,Cap1). The buffer outputs a first operating mode signal. The operation mode selecting circuit comprises the switching unit connected to the input terminal of the buffer. The switching unit is turned on according to the active state of a first operating mode. The current path cutout unit is connected to the switching unit. The current path cutout unit is a power supply voltage and a DC(Direct Current) path to ground connection in the turn-off state of the switching unit. The bonding pad is the pad deciding an x4 or x8 action mode.
申请公布号 KR20090130931(A) 申请公布日期 2009.12.28
申请号 KR20080056652 申请日期 2008.06.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, SUNG HOON
分类号 G11C11/40 主分类号 G11C11/40
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