SEMICONDUCTOR DEVICE BONDING WIRE AND WIRE BONDING METHOD

摘要

Provided is a copper-based bonding wire whose material cost is low, and ball bondability and reliability in thermal cycle test or reflow test is excellent. The copper-based bonding wire also has excellent storage life and is applicable to fine wiring for narrow pitch. The bonding wire is provided with a core material having copper as a main component, and an outer layer, which is arranged on the core material and contains a metal (M) having one of or both of the components and composition different from those of the core material, and copper. The semiconductor device bonding wire is characterized in that the thickness of the outer layer is 0.021-0.12μm.