| 摘要 |
<p>PURPOSE: A method for forming an auxiliary pattern in a mask for a semiconductor device and a mask for a semiconductor device manufactured by using the method are provided to form a desired pattern finely after an exposure process by forming an auxiliary pattern for compensating an optical proximity effect. CONSTITUTION: In a device, a separation distance between main patterns(1) is checked. A central line is perpendicularly formed at a part which is the separation distance over the checked separation distance. The distance to an adjacent main pattern is checked from each central line. First assistant patterns(160,170,180) are formed at the central line of a disk. The first assistant pattern is arranged between the main patterns having the separation distance over a predetermined level. Second subsidiary patterns(230,240) are arranged between the main patterns adjacent to the first assistant pattern.</p> |
