| 摘要 |
PURPOSE: A method for forming a fluorine barrier layer is provided to prevent the diffusion of a fluorine element of an oxide doped with fluorine by forming an SRO(Silicon Rich Oxide) layer having a crystal structure before depositing the oxide doped with the fluorine on the silicon dioxide. CONSTITUTION: In a device, a silicon oxide is evaporated on a space for an insulating material between the metal wiring. An SRO layer is formed by doping the silicon through an ion injection process on the silicon dioxide(SiO2). The SRO layer prevents the diffusion of the fluorine element of the doped oxide(Fluorine doped oxide). A crystal structure which is damaged due to the silicon doping is restored through an annealing process of using a halogen lamp. A fluorine diffusion barrier(230) is formed by restoring the damaged crystal structure. A buried layer between metals is evaporated by evaporating the oxide(240) doped with the fluorine.
|
