| 摘要 |
FIELD: physics; conductors. ^ SUBSTANCE: invention can be used for making photosensitive digital and analogue devices. According to the invention, the CMOS photodetector element comprises a photodiode and transistors of the photodiode control circuit. According to the invention, the photodiode is formed by two layers: an embedded low-doped n-type layer (grown on a blank substrate of p-type conductivity, a p-type pocket forms on the surface of the given n-epitaxial layer), which serves as the body of the photodiode, and a surface n+-layer which is aligned with the embedded photodiode layer at a certain depth. The substrate and the p-type pocket are connected to an earth bus and the n-region of the photodiode is connected to the positive supply potential bus. The n+-region of the photodiode is the source of the control transistor of the photodetector element circuit. With the respective selection of doping levels of diffused layers and control voltages, the n-layer of the photodiode in accumulation mode appears completely depleted, which enables transfer of photogenerated charge carriers into the n+-layer of the photodiode through directed electric fields surrounding a considerable part of the body of the photodetector element. ^ EFFECT: increased sensitivity of the CMOS photodetector element and reduced noise. ^ 6 dwg |
