| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a piezoelectric device of high mechanical strength and composed of a piezoelectric body film of high orientation tendency. <P>SOLUTION: In the piezoelectric device 1 which is an MEMS (MicroElectro Mechanical System) device, a whole of silicon layer 14 of SOI (Silicon On Insulator) substrate 11 is made as a p type region. Then, a plurality of n type regions 15 are formed within the silicon layer 14 in a mutually separated fashion to be exposed at the top face of the silicon layer 14. In addition, a piezoelectric body film 16 composed of AlN is formed on the SOI substrate 11 so as to contact with the n type region 15, and a conductor film 17 composed of aluminum is formed on the piezoelectric body film 16. Consequently the n type region 15 functions as a lower electrode, and the conductor film 17 functions as an upper electrode. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
