| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vacuum vapor deposition apparatus which can perform vapor deposition at an always high vapor deposition rate, and nevertheless does not give damage to a semiconductor substrate to be subjected to vapor deposition, and does not give rise to curing of a photoresist, and an electron beam irradiation method of the vacuum vapor deposition apparatus. Ž<P>SOLUTION: The vacuum vapor deposition apparatus 10 includes: a substrate holder for holding a semiconductor substrate 24; an electron beam generating means for irradiating an evaporation material with an electron beam 17 to cause evaporation; a beam orbit control means for controlling the orbit of the electron beam 17 in order to project the electron beam 17 on the evaporation means; a vapor deposition rate detection means for detecting the vapor deposition rate of the thin film vapor deposited on the semiconductor substrate 24; a high vapor deposition rate position calculate means for calculating the high vapor deposition rate position at which the vapor deposition rate higher than the above described vapor deposition rate can be obtained when the vapor deposition rate is reduced; and a beam orbit correction means for correcting the orbit of the electron beam 17 in such a manner that the high vapor deposition rate position of the vapor deposition material is irradiated with the electron beam 17. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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