| 发明名称 |
DIFFUSION BARRIER AND METHOD OF FORMATION THEREOF |
| 摘要 |
A method of forming a device is presented. The method includes providing a structure having first and second regions. A diffusion barrier is formed between at least a portion of the first and second regions. The diffusion barrier comprises cavities that reduce diffusion of elements between the first and second regions.
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| 申请公布号 |
US2009315152(A1) |
申请公布日期 |
2009.12.24 |
| 申请号 |
US20080144652 |
申请日期 |
2008.06.24 |
| 申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING, LTD. |
发明人 |
TAN SHYUE SENG;TEO LEE WEE;CHONG YUNG FU;QUEK ELGIN;CHU SANFORD |
| 分类号 |
H01L29/32;H01L21/76 |
主分类号 |
H01L29/32 |
| 代理机构 |
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