| 摘要 |
PROBLEM TO BE SOLVED: To obtain at low cost in high productivity the subject member capable of preventing contamination due to metallic impurities such as wafers, excellent in durability and solvent resistance, using a high-density, high-purity and high- quality silicon carbide sintered compact. SOLUTION: This member for semiconductor production units consists of a silicon carbide sintered compact >=2.9 g/cm<3> in density which is obtained by sintering a mixture of silicon carbide powder and a non-metallic sintering auxiliary. It is preferable that this sintered compact is <=1 ohm.cm in resistivity, >=200 W/m.k in thermal conductivity and <1 ppm in total impurity element content. This member may be of collapsible type. |
