| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate polishing apparatus and a method of polishing a substrate, which can precisely polishing the substrate at a target residual film thickness, while suppressing the lowering of yield caused by excess polishing and increasing of production cost caused by rework in a process. <P>SOLUTION: The polishing apparatus includes a mechanism 302 for polishing a substrate to be polished, a film thickness measuring apparatus 307 for measuring the thickness of a thin film formed on the substrate, an interface 310 for inputting a thin film thickness after target polishing, and a controller 308 having an arithmetic unit 308b for calculating the polishing time and speed. The arithmetic unit 308b includes means for calculating the polishing speed of at least one layer or respective thin films in a plurality of stacked thin films formed on the substrate based on the polishing speed ratio of respective kinds of films upper and lower thin layers formed on the substrate, and the relation between the polished amount of thin film formed on the substrate and the polishing time, and includes means for setting an additional polishing time based on the calculated polishing speed. <P>COPYRIGHT: (C)2010,JPO&INPIT |
