发明名称 PROXIMITY EXPOSURE APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide an exposure apparatus in which influences of diffraction in an exposure pattern is easily reduced. <P>SOLUTION: The apparatus is equipped with: a photomask 31 having a primary exposure pattern 31e and a secondary exposure pattern 31f for a workpiece W; a mask holder 30 holding the photomask 31 opposed and close to the workpiece W; a holder driving means 32 adjusting the position and posture of the mask holder 30; a workpiece conveying means 41 mounting the workpiece W thereon and moving it with respect to the mask holder 30; an exposure light source unit including a primary exposure light source and a secondary exposure light source; and an exposure optical system 2c that collimates each of the light emitted from the primary exposure light source and the light emitted from the secondary exposure light source to irradiate the photomask 31 with the light. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009300580(A) 申请公布日期 2009.12.24
申请号 JP20080152841 申请日期 2008.06.11
申请人 V TECHNOLOGY CO LTD 发明人 ISHII DAISUKE
分类号 G03F7/20 主分类号 G03F7/20
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