| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a device structure maintaining the adhesion between platinum and a gate insulating film (a silicon oxide film), being capable of suppressing hydrogen poisoning even if the structure is exposed to hydrogen gas with high concentration, and being capable of realizing hydrogen response strength equal to or greater than that of the Si-MOSFET type hydrogen gas sensor using a palladium membrane for the gate electrode, in an Si-MOSFET type hydrogen gas sensor using a platinum membrane for a gate electrode. <P>SOLUTION: The gate structure is a structure with a Pt-Ti-O region composed of amorphous titanium that oxygen is doped in the grain boundary 6 (including grain boundary near-field region 7) among platinum microcrystals 5 and a platinum-titanium diffusion layer. Also, the gate structure has an oxygen-dope titanium membrane 3 (the film is mixed with amorphous titanium that oxygen is doped, and amorphous titanium oxide or titanium oxide microcrystals) below the platinum microcrystals 5 with the Pt-Ti-O region in the grain boundary 6. <P>COPYRIGHT: (C)2010,JPO&INPIT |
