| 发明名称 |
MANUFACTURING METHOD OF FERROELECTRIC FILM, MANUFACTURING METHOD OF ELEMENT USING PIEZOELECTRIC FILM, AND FILM FORMATION DEVICE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To efficiently manufacture an element having a ferroelectric film in a composition range large in piezoelectric effect. <P>SOLUTION: Mixture plasma of He gas and oxygen gas is generated by using a pressure gradient type plasma gun having a third intermediate electrode 7, and the ferroelectric film is formed by oxidizing a film formation material by oxygen radicals in the mixture plasma. Since a high-concentration oxygen radical can be generated by using He as a discharge gas, a film in a composition range large in piezoelectric effect, for instance, represented by Pb(Zr<SB>x</SB>Ti<SB>1-x</SB>)O<SB>3</SB>(x>0.4) can be efficiently manufactured. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
| 申请公布号 |
JP2009302297(A) |
申请公布日期 |
2009.12.24 |
| 申请号 |
JP20080155232 |
申请日期 |
2008.06.13 |
| 申请人 |
STANLEY ELECTRIC CO LTD |
发明人 |
AKAMATSU MASAHIRO;YASUDA YOSHIAKI;TANI MASANAO;AIMONO TAKANORI |
| 分类号 |
H01L21/316;C23C14/08;C23C14/32;H01L21/31;H01L21/8246;H01L27/105;H01L41/18;H01L41/316;H01L41/39 |
主分类号 |
H01L21/316 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
