| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve such a problem of a possibility of generating a residue consisting of polysilicone on the element separation region during the production of a semiconductor having a gate insulating film containing a high-dielectric material and a metal gate electrode. Ž<P>SOLUTION: On the first active region 10a of a semiconductor substrate 10, a first transistor of the first conductive type is formed including: a first gate insulation film 13a containing a high-dielectric material and a first metal; and a first gate electrode 30a having a lower layer conductive film 15a, a first conductive film 18a and a first silicone film 19a. On the second active region 10b of the semiconductor substrate 10, a second transistor of the second conductive type is formed including: a second gate insulation film 13b containing the high-dielectric material and a second metal; and a second gate electrode 30b having a second conductive film 18b composed of the same material as the first conductive film 18a and a second silicone film 19b. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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