| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxide thin film transistor having good properties and a method for manufacturing the same. SOLUTION: A gate insulating layer 5 is laminated on an upper surface of an oxide semiconductor layer 9. The gate insulating layer 5 is composed of a lower organic insulating layer 51 composed of an organic insulating material, and an upper inorganic insulating layer 52 composed of an inorganic insulating material. Additionally, the inorganic insulation layer 52 is formed by a coating method using a perhydropolysilazane solution. Since only the organic insulating layer 51, which can be formed without damaging the oxide semiconductor layer 9, is brought into contact with the upper surface of the oxide semiconductor layer 9, the gate insulating layer 5 can be formed without damaging the oxide semiconductor layer 9. Furthermore, the inorganic insulation layer 52 can be formed in a simple way and at lower cost without using large-scale equipment by using the coating method. Thus, a high-performance oxide thin film transistor is obtained easily at low cost. COPYRIGHT: (C)2010,JPO&INPIT |
