发明名称 |
RAISED FACET- AND NON-FACET 3D SOURCE/DRAIN CONTACTS IN MOSFETS |
摘要 |
An apparatus comprising a semiconductor substrate; a conductively doped source or drain (source/drain) region at the surface of the substrate; a raised semiconductor layer deposited over the source/drain region to form a raised source/drain region; a via formed in the raised source/drain region having substantially vertical sidewalls reaching partly or substantially to the source/drain region; and a metal contact filling the via.
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申请公布号 |
US2009315120(A1) |
申请公布日期 |
2009.12.24 |
申请号 |
US20080145296 |
申请日期 |
2008.06.24 |
申请人 |
SHIFREN LUCIAN;ZAWADZKI KEITH;GILES MARTIN;WEBER CORY |
发明人 |
SHIFREN LUCIAN;ZAWADZKI KEITH;GILES MARTIN;WEBER CORY |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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