发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SUBSTRATE |
摘要 |
A semiconductor device includes a semiconductor substrate, a gate pattern disposed on the semiconductor substrate, a body region disposed on the gate pattern and a first impurity doping region and a second impurity doping region. The gate pattern is disposed below the body region and the first impurity doping region and the second impurity doping region.
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申请公布号 |
US2009315084(A1) |
申请公布日期 |
2009.12.24 |
申请号 |
US20090472951 |
申请日期 |
2009.05.27 |
申请人 |
CHA DAE-KIL;KIM WON-JOO;LEE TAE-HEE;PARK YOON-DONG |
发明人 |
CHA DAE-KIL;KIM WON-JOO;LEE TAE-HEE;PARK YOON-DONG |
分类号 |
H01L29/73;H01L21/306;H01L29/06;H01L29/78 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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