发明名称 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SUBSTRATE
摘要 A semiconductor device includes a semiconductor substrate, a gate pattern disposed on the semiconductor substrate, a body region disposed on the gate pattern and a first impurity doping region and a second impurity doping region. The gate pattern is disposed below the body region and the first impurity doping region and the second impurity doping region.
申请公布号 US2009315084(A1) 申请公布日期 2009.12.24
申请号 US20090472951 申请日期 2009.05.27
申请人 CHA DAE-KIL;KIM WON-JOO;LEE TAE-HEE;PARK YOON-DONG 发明人 CHA DAE-KIL;KIM WON-JOO;LEE TAE-HEE;PARK YOON-DONG
分类号 H01L29/73;H01L21/306;H01L29/06;H01L29/78 主分类号 H01L29/73
代理机构 代理人
主权项
地址