发明名称 |
CMP method for metal-containing substrates |
摘要 |
An aqueous chemical-mechanical polishing composition for polishing metal containing substrates comprising an abrasive particle consisting essentially of a primary particle modified with an aluminosilicate layer, and wherein the abrasive particle has a zeta potential measured at pH 2.3 of about -5 mV to about -100 mV. The composition can be used to polish the surface of a tungsten containing substrate.
|
申请公布号 |
US2009314744(A1) |
申请公布日期 |
2009.12.24 |
申请号 |
US20070309212 |
申请日期 |
2007.07.06 |
申请人 |
VACASSY ROBERT;ZHOU RENJIE |
发明人 |
VACASSY ROBERT;ZHOU RENJIE |
分类号 |
B44C1/22;C09K3/14;C09K13/00 |
主分类号 |
B44C1/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|