| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a plasma processing device capable of carrying out a uniform processing, even if the ratios of gas conductance of a main gas passage to those of a plurality of branch gas passages are increased, and to provide a plasma processing method. <P>SOLUTION: This plasma processing device includes: a processing vessel 100; a gas supply source 905 supplying a desired gas; a main gas passage 330 shunting a gas supplied from the gas supply source 905; a plurality of branch gas passages (screws 325) connected to the downstream side of the main gas passage 330; a plurality of squeezing parts (fine tubes 335) arranged in the plurality of branch gas passages (screws 325), and narrowing the branch gas passages; and one or more gas discharge holes 345 for every branch gas passage for discharging, into the processing vessel 100, the gas having passed through the plurality of squeezing parts (fine tubes 335) arranged in the plurality of branch gas passages (screws 325). <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
