| 摘要 |
PROBLEM TO BE SOLVED: To suppress deterioration in mobility of an MISFET (Metal Insulator Semiconductor Field Effect Transistor). SOLUTION: An nMOSFET Qn has a gate electrode 4 on a substrate 1 with a gate insulating film 3 interposed. The gate insulating film 3 has an oxide film which has a higher dielectric constant than that of silicon oxide and contains hafnium. The gate electrode 4 has a titanium oxide film 5 on the gate insulating film 3 and a nickel-rich full-silicide film 6 on the titanium nitride film 5. A pMOSFET Qp has a gate electrode 12 on the substrate 1 with a gate insulating film 11 interposed. The gate insulating film 11 has an oxide film which has a higher dielectric constant than that of silicon oxide and contains hafnium. The gate electrode 12 has a nickel-rich full-silicide film 6 on the gate insulating film 11. COPYRIGHT: (C)2010,JPO&INPIT
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