| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of attaining high activity of an impurity and preventing performance of the semiconductor device from being reduced. SOLUTION: A method of manufacturing a semiconductor device includes the steps of: forming a gate insulating film 3 including a high dielectric constant insulating film constituted of a material whose specific dielectric constant is higher than that of a silicon oxide film on a substrate 1; forming a gate electrode 4 including a metal on the gate insulating film 3; forming an extension area 5 by implanting an impurity into the substrate while using the gate electrode 4 as a mask; and performing heat treatment upon the substrate 1, into which the impurity has been implanted, through flash lamp anneal or laser anneal. The step of heat treatment includes a first step of irradiating the substrate 1 with pulse light having a predetermined peak intensity and a second step of irradiating the substrate 1 with pulse light whose peak intensity is lower than that of the pulse light in the first step. COPYRIGHT: (C)2010,JPO&INPIT
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