| 摘要 |
PROBLEM TO BE SOLVED: To improve characteristics of a semiconductor device with a nonvolatile memory. SOLUTION: A method of manufacturing the semiconductor device includes a process of forming the nonvolatile memory in a memory region Rm on a silicon substrate 1, wherein a selection gate electrode CG is formed on the principal surface of the silicon substrate 1 and a dummy gate DG adjoining one sidewall surface is formed. Then a memory source-drain region SDm is formed by ion implantation D01 using the dummy gate DG as an ion implantation mask. Then the dummy gate DG is removed, and a charge storage film and a memory gate electrode are formed in order at a place where the dummy gate DG has been disposed to form a structure having the memory source-drain region SDm disposed at a lower part in the side of the memory gate electrode. In a principal process, the charge storage film and memory gate electrode are formed after ion implantation D01 for forming the memory source-drain region SDm is carried out. COPYRIGHT: (C)2010,JPO&INPIT |
