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发明名称
Herstellungsverfahren einer Nitrid-Halbleiter-Laserdiode
摘要
申请公布号
DE602006010306(D1)
申请公布日期
2009.12.24
申请号
DE200660010306T
申请日期
2006.07.03
申请人
SAMSUNG ELECTRONICS CO. LTD.
发明人
SAKONG, TAN;SUNG, YOUN-JOON;PAEK, HO-SUN
分类号
H01S5/323;H01S5/028;H01S5/10;H01S5/16;H01S5/343
主分类号
H01S5/323
代理机构
代理人
主权项
地址
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