| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device in which the increase of chip size is suppressed, by reducing the number of transistors that have high breakdown voltage. <P>SOLUTION: A second transistor M2-1 of N channel type is connected between a wordline WL1 and a decoder circuit 10-1. A control signal V2 from a control circuit 30 is applied to the gate of the second transistor M2-1. When the output of the decoder circuit 10-1 is low, the wordline WL1 is in the non-selective state, and a high voltage Vee from a switching circuit 20-1 is not output to the wordline WL1. In place of this, a grounding voltage Vss (non-erasable voltage) is supplied to the wordline WL1 from the decoder circuit 10-1 through the second transistor M2-1. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
