| 摘要 |
<P>PROBLEM TO BE SOLVED: To secure a large window in forming a trench by further deeply forming a deep layer. Ž<P>SOLUTION: In forming a p-type deep layer 10, p-type impurities are implanted by oblique ion implantation tilted in a direction for canceling an off-angle. Thereby, the p-type deep layer 10 can be formed up to a further deep location. Accordingly, a large gap of a bottom part of a trench 6 can be secured from the bottom part of the p-type deep layer 10 , and a large process window can be secured in forming the trench 6. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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