| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing a leak current without degrading a high-frequency response characteristic, and reducing gate length. Ž<P>SOLUTION: A laminate structure of an AlGaAs layer 4A and an InGsP layer 4B is used for an electron supply layer 4, and a laminate structure of a SiN film 6A and a SiO<SB>2</SB>film 6B is used for an insulation film 6 to be formed on the front surface of a semiconductor. When forming, on the insulation film 6, an opening 60 for exposing the electron supply layer 4 therefrom, the SiN film 6A in contact with a semiconductor is side-etched, whereby contact between an inner peripheral surface 61 of the opening 60 on the electron supply layer 4 side and a gate electrode 7 is avoided, and only the InGsP layer 4B can be exposed around the gate electrode 7. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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