发明名称 METHOD FOR PRODUCING SILICON CARBIDE TUBE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide tube excellent in oxidation resistance and having heat resistance even at a high temperature of ≥1,000°C. Ž<P>SOLUTION: The method for producing the silicon carbide tube includes; a step of disposing a carbon fiber satisfying the following (a) and/or (b) and having an average outside diameter of ≥50 nm and an aspect ratio (diameter/length) of ≥10 and silicon monoxide in a reactor in a mutually isolated state without mixing with each other; a step of forming silicon carbide through a reaction by heating the reactor to ≥1,400°C in a vacuum of ≤0.1 atm in a heating furnace; and a step of heating the reaction product in the air at 600-800°C to remove the residual carbon by oxidation, wherein (a) the half-value width of the X-ray diffraction intensity of a graphite (002) face has intensity of ≤1°, and (b) a weight reduction upon heating in the air at 600°C is ≤10%. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009298610(A) 申请公布日期 2009.12.24
申请号 JP20080152490 申请日期 2008.06.11
申请人 SHIN-ETSU CHEMICAL CO LTD 发明人 MAKIKAWA SHINJI;YAMADA MOTOYUKI;KUBOTA YOSHIHIRO
分类号 C01B31/36;D01F9/10 主分类号 C01B31/36
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