| 摘要 |
A method for manufacturing a semiconductor device, semiconductor production equipment, and a storage medium, which suppress abnormal arc discharge occurring when plasma is excited while preventing misalignment of a substrate placed on an electrostatic chuck, are provided. The method includes a first process in which a substrate is placed on an electrostatic chuck in a reaction container and a first electrostatic chuck voltage is applied to the electrostatic chuck to absorb the substrate onto the electrostatic chuck, a second process in which the first electrostatic chuck voltage is reduced to a second electrostatic chuck voltage, a third process in which a high-frequency voltage is applied between parallel plate electrodes in the reaction container to generate plasma, and a fourth process in which the second electrostatic chuck voltage is changed to a third electrostatic chuck voltage higher than the second electrostatic chuck voltage.
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