发明名称 |
Apparatus and method for inhibiting excess leakage current in unselected nonvolatile memory cells in an array |
摘要 |
An apparatus and method for operating an array of NOR connected flash nonvolatile memory cells erases the array in increments of a page, block, sector, or the entire array while minimizing sub-threshold leakage current through unselected nonvolatile memory cells. The apparatus has a row decoder circuit and a source decoder circuit for selecting the nonvolatile memory cells for providing biasing conditions for reading, programming, verifying, and erasing the selected nonvolatile memory cells while minimizing sub-threshold leakage current through unselected nonvolatile memory cells.
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申请公布号 |
US2009316487(A1) |
申请公布日期 |
2009.12.24 |
申请号 |
US20090456744 |
申请日期 |
2009.06.22 |
申请人 |
APLUS FLASH TECHNOLOGY, INC. |
发明人 |
LEE PETER WUNG;HSU FU-CHANG;TSAO HSING-YA |
分类号 |
G11C16/06;G11C7/00;G11C16/04 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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