| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a wiring structure without complex manufacturing processes and without causing the deterioration of the reliability of wiring, and to provide its manufacturing method. SOLUTION: An NiFe magnetic layer 13 is film-formed by a PVD method using an NiFe chamber of a PVD device on the bottom surface and side surface of a connection hole 30 and the bottom surface and the side surface of a groove 31 for wiring through a Ta/TaN laminated barrier layer 12. Next, the NiFe magnetic layer 13 on the bottom surface of the connection hole 30 and the groove 31 for wiring, and on the surface of an interlayer insulating film 11 is selectively removed by varying the film-forming condition with the use of the identical NiFe chamber of the identical PVD device. Furthermore, a Ta barrier layer and a Cu seed layer are sequentially formed on the bottom surface and the side surface of the connection hole 30 and the bottom surface and the side surface of the groove 31 for wiring by the use of a Ta chamber and a Cu camber of the identical PVD device. COPYRIGHT: (C)2010,JPO&INPIT |
